Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors
نویسندگان
چکیده
In this paper, we study the electrical properties and current-temperature stress (CTS) induced electrical instability of half Corbino and fork-shaped hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) fabricated on the same substrate. The influence on overall electrical properties of the threshold voltage shift of half Corbino a-Si:H TFT is discussed in comparison to fork-shaped a-Si:H TFT. The results indicate that half Corbino a-Si:H TFT has improved ON-current levels and electrical stability in comparison to fork-shaped a-Si:H TFT with the similar structural dimension. # 2011 The Japan Society of Applied Physics
منابع مشابه
Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays
The half-Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active matrix liquid-crystal displays (AM-LCD). We showed that the a-Si:H half-Corbino TFTs have the asymmetric electrical characteristics under different drain-bias conditions. In comparison to half-Corbino TFT with unpatterned gate e...
متن کاملP-102: Amorphous Silicon Thin-Film Transistors-based Active-Matrix Organic Light-Emitting Displays
In this paper, we describe hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT)-based active-matrix arrays for active-matrix organic light-emitting displays (AM-OLEDs). The proposed pixel electrode circuits based on three a-Si:H TFTs can supply a continuous output current for AM-OLEDs. Each pixel circuit has compensation circuits that can adjust for the OLED and a-Si:H TFTs electr...
متن کاملStable transistors in hydrogenated amorphous silicon
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band ...
متن کاملAnalysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors
Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addresses liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1 s) shows a clear dependence on the channel lengt...
متن کاملIntegration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon
Selective exposure of a hydrogenated amorphous silicon ~a-Si:H! film to a room-temperature hydrogen plasma using a patterned masking layer and a subsequent anneal at 600 °C, results in patterned polycrystalline and amorphous silicon regions. However, most of the hydrogen in the amorphous silicon is lost, leading to severe degradation in its properties. In this letter, we report the rehydrogenat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011